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Description: power mosfet( vdss= 55v, rds( on) = 17. file size: 100kbytes. manufacturer: international rectifier. 7 – on- resistance vs. description advanced hexfet® power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area.
philips semiconductors product specification n- channel datasheet enhancement mode irfz44n trenchmos tm transistor general description quick reference data n- channel enhancemen t mode symbol parameter max. unit standard pdf level field- eff ect power transistor in a plastic envel ope using vds drain- source voltage 55 v ’ trench’ technology. the device featuresverylowon- stateresistance and has integral zener diodes giving esd irfz44n datasheet pdf protection up to 2kv. the ir mosfet pdf family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, smps, lighting, load switches as well as battery powered applications. irfz44n n- channel enhancement- mode mosfet ratings and characteristic curves fig. n- channel enhancement mode standard level field- effect power transistor in a plastic envelope using ’ trench’ technology. general description. 04 r ds( on) - - on- resistance ( ω) vgs- - gate- to- source voltage ( vid = 25a vsd — source- to- drain voltage ( v) fig.
gate- to- source voltage 0 0. it can be used in a wide variety of applications. 55v single n- channel power mosfet in datasheet a to- 220 package. irfz44n green product 60v n- channel power mosfet description the irfz44n uses advanced trench technology to provide excellent r ds( on), low gate charge. application power switching application hard switched and high frequency circuits uninterruptible power supply key characteristics v ds = 60v, i. 6 - source- drain diode forward voltage irfz44n datasheet pdf 0. part # : irfz44n.
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